| COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| INTERNAL CONFIGURATION | JUNCTION CONTACT ALL TRANSISTOR |
| INTERNAL JUNCTION CONFIGURATION | NPN ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 250.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND |
| 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND |
| 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 90.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
| INCLOSURE MATERIAL | METAL ALL TRANSISTOR |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR ALL TRANSISTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 ALL TRANSISTOR |
| MOUNTING METHOD | UNTHREADED HOLE ALL TRANSISTOR |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND |
| 2 PIN ALL TRANSISTOR |
| OVERALL LENGTH | 1.553 INCHES MINIMUM AND |
| 1.573 INCHES MAXIMUM ALL TRANSISTOR |
| OVERALL HEIGHT | 0.637 INCHES NOMINAL ALL TRANSISTOR |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM ALL TRANSISTOR |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |