| BODY HEIGHT | 0.039 INCHES NOMINAL |
| BODY LENGTH | 0.724 INCHES NOMINAL |
| BODY WIDTH | 0.472 INCHES NOMINAL |
| CRITICALITY CODE JUSTIFICATION | AFGA AND AFJQ AND CBBL |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND RADIATION HARDENED |
| INCLOSURE CONFIGURATION | LEADED CHIP CARRIER |
| NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| OPERATING TEMP RANGE | -40.0/+85.0 DEG CELSIUS |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| OVERALL HEIGHT | 0.047 INCHES MAXIMUM |
| OVERALL LENGTH | 0.787 INCHES NOMINAL |
| OVERALL WIDTH | 0.472 INCHES NOMINAL |
| MEMORY CAPACITY | 2079152 X 8-BIT |
| MEMORY DEVICE TYPE | EEPROM |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, FLASH |
| STORAGE TEMP RANGE | -65.0/+125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 48 GULLWING |
| TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS AF OUTPUT MEGAWATTS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -2.0 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |