| BODY HEIGHT | 0.185 INCHES MAXIMUM |
| BODY LENGTH | 1.060 INCHES MAXIMUM |
| BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CASE OUTLINE SOURCE AND DESIGNATOR | F-9 MIL-M-38510 |
| CURRENT RATING PER CHARACTERISTIC | 35.00 MILLIAMPERES NOMINAL OUTPUT |
| DESIGN FUNCTION AND QUANTITY | 8 BUFFER, TRI-STATE |
| FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND HIGH SPEED AND MONOLITHIC |
| INCLOSURE CONFIGURATION | FLAT PACK |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | 10 INPUT |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 300.0 MILLIWATTS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/657 GOVERNMENT SPECIFICATION |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TIME RATING PER CHACTERISTIC | 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |