| BODY LENGTH | 4.8 MILLIMETERS MINIMUM AND 5.0 MILLIMETERS MAXIMUM |
| BODY WIDTH | 3.8 MILLIMETERS MINIMUM AND 4.0 MILLIMETERS MAXIMUM |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| OPERATING TEMP RANGE | -55.0 TO 150.0 DEG CELSIUS |
| OUTPUT LOGIC FORM | P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| OVERALL HEIGHT | 1.35 MILLIMETERS MINIMUM AND 1.75 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 5.8 MILLIMETERS MINIMUM AND 6.2 MILLIMETERS MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 2.5 WATTS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | P-CHANNEL, 30 VOLT (D-S), METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET) |
| SPECIAL FEATURES | NOT RECOMMENDED FOR NEW DESIGN, USE PART NUMBER SI4435BDY, CAGE 17856 |
| TIME RATING PER CHACTERISTIC | 30.00 NANOSECONDS MAXIMUM ON AND 120.00 NANOSECONDS MAXIMUM OFF |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -30.0 VOLTS MAXIMUM DRAIN SOURCE |
| TERMINAL TYPE AND QUANTITY | 8 GULLWING |