FEATURES PROVIDED | MONOLITHIC AND ULTRAVIOLET ERASABLE |
INCLOSURE CONFIGURATION | LEADED CHIP CARRIER |
OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
MEMORY DEVICE TYPE | EPROM |
PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 262, 144-BIT, UV ERASABLE PROM, MONOLITHIC SILICON |
SPECIAL FEATURES | THIS ITEM IS TO BE BUILT FROM AN ALTERED ITEM UNDER SMD 5962-8606302XA |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
TERMINAL TYPE AND QUANTITY | 32 J-HOOK |
TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |