| BIT QUANTITY | 262144 |
| BODY HEIGHT | 0.130 INCHES NOMINAL |
| BODY LENGTH | 0.750 INCHES NOMINAL |
| BODY WIDTH | 0.250 INCHES NOMINAL |
| FEATURES PROVIDED | DYNAMIC AND LOW POWER AND MONOLITHIC |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | PLASTIC |
| INPUT CIRCUIT PATTERN | 12 INPUT |
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | +0.0 TO 70.0 CELSIUS |
| STORAGE TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| WORD QUANTITY | 262144 |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |