| MEMORY DEVICE TYPE | ROM |
| BODY HEIGHT | 0.150 INCHES MAXIMUM |
| BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| STORAGE TEMP RANGE | -65.0 TO 125.0 DEG CELSIUS |
| OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
| BODY LENGTH | 1.290 INCHES MAXIMUM |
| TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND MONOLITHIC |
| PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACES OPTION GOLD |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| MAXIMUM POWER DISSIPATION RATING | 1.88 WATTS |
| INCLOSURE MATERIAL | CERAMIC |
| PRECIOUS MATERIAL | GOLD |
| INPUT CIRCUIT PATTERN | 14 INPUT |