| BODY HEIGHT | 0.185 INCHES MAXIMUM |
| BODY LENGTH | 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| BODY WIDTH | 0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM |
| CASE OUTLINE SOURCE AND DESIGNATOR | TO-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| DESIGN FUNCTION AND QUANTITY | 2 GATE, NAND BUFFER |
| FEATURES PROVIDED | BIPOLAR AND BURN IN AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC AND GLASS |
| INPUT CIRCUIT PATTERN | DUAL 4 INPUT |
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 19.0 MILLIWATTS |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL TYPE AND QUANTITY | 14 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TIME RATING PER CHACTERISTIC | 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |