| BODY HEIGHT | 0.180 INCHES MAXIMUM |
| BODY LENGTH | 0.770 INCHES MAXIMUM |
| BODY WIDTH | 0.260 INCHES MAXIMUM |
| CASE OUTLINE SOURCE AND DESIGNATOR | MO-001AB JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| DESIGN FUNCTION AND QUANTITY | 4 GATE, NAND |
| FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND HIGH VOLTAGE AND W/BUFFERED OUTPUT |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | QUAD 2 INPUT |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 14 PRINTED CIRCUIT |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 20.0 VOLTS MAXIMUM POWER SOURCE |