| BIT QUANTITY | 16384 |
| BODY HEIGHT | 0.205 INCHES MAXIMUM |
| BODY LENGTH | 1.290 INCHES MAXIMUM |
| BODY WIDTH | 0.600 INCHES MAXIMUM |
| FEATURES PROVIDED | LOW POWER AND ERASABLE AND PROGRAMMABLE AND STATIC OPERATION AND 3-STATE OUTPUT AND HERMETICALLY SEALED |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | 13 INPUT |
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 285.0 MILLIWATTS |
| MEMORY DEVICE TYPE | ROM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| STORAGE TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| WORD QUANTITY | 2048 |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 6.0 VOLTS MAXIMUM POWER SOURCE |