| DESIGN FUNCTION AND QUANTITY | 4 SWITCH, FIELD EFFECT TRANSISTOR |
| BODY HEIGHT | 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM |
| BODY LENGTH | 0.745 INCHES MINIMUM AND 0.755 INCHES MAXIMUM |
| BODY WIDTH | 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM |
| FEATURES PROVIDED | W/FIELD EFFECT TRANSISTOR SWITCH AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS AND HIGH SPEED |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | PLASTIC |
| INPUT CIRCUIT PATTERN | 4 CHANNEL |
| PROPRIETARY CHARACTERISTICS | PACS |
| MAXIMUM POWER DISSIPATION RATING | 625.0 MILLIWATTS |
| OPERATING TEMP RANGE | +0.0/+85.0 DEG CELSIUS |
| OUTPUT LOGIC FORM | DOUBLE DIFFUSED-METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 30.0 VOLTS MAXIMUM POWER SOURCE |
| STORAGE TEMP RANGE | -55.0/+150.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TIME RATING PER CHACTERISTIC | 9.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |