| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.0 NOMINAL EMITTER TO COLLECTOR VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | 400.00 AMPERES NOMINAL FORWARD CURRENT, DC |
| INCLOSURE MATERIAL | PLASTIC AND |
| METAL |
| TERMINAL TYPE AND QUANTITY | 4 QUICK DISCONNECT, FEMALE |
| OVERALL LENGTH | 106.4 MILLIMETERS NOMINAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 4 |
| OVERALL HEIGHT | 36.5 MILLIMETERS NOMINAL |
| OVERALL WIDTH | 61.4 MILLIMETERS NOMINAL |
| SPECIAL FEATURES | ISOLATED COPPER BASEPLATE USING DBC DIRECT COPPER BONDING TECHNOLOGY; MOS INPUT (VOLTAGE CONTROLLED); N CHANNEL, HOMOGENEOUS SI; LOW INDUCTANCE CASE; VERY LOW TAIL CURRENT WITH LOW TEMPERATURE DEPENDENCE; HIGH SHORT CIRCUIT CAPABILITY; LATCH-UP FREE; FAST AND SOFT CAL DIODES; LARGE CLEARANCE (12MM) AND CREEPAGE DISTANCES (20MM) |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | INAVY: TRANSISTOR; CAGE: IGBT MODULE |