| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES NOMINAL COLLECTOR CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 1.5 WATTS NOMINAL TOTAL POWER DISSIPATION |
| INCLOSURE MATERIAL | PLASTIC |
| TERMINAL TYPE AND QUANTITY | 3 TAB, SOLDER LUG |
| OVERALL LENGTH | 0.249 INCHES MINIMUM AND |
| 0.263 INCHES MAXIMUM |
| MOUNTING METHOD | SLOT |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL LENGTH | 0.069 INCHES NOMINAL |
| OVERALL HEIGHT | 0.060 INCHES MINIMUM AND |
| 0.068 INCHES MAXIMUM |
| OVERALL WIDTH | 0.130 INCHES MINIMUM AND |
| 0.145 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | AMPLIFIER |
| SPECIAL FEATURES | LEAD(PB) FREE; NPN SILICON EPITAXIAL TRANSISTOR; 1000/TAPE AND REEL; OPERATING AND STORAGE TEMP RANGE: M65.0/P150.0 DEG C |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT |