| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND |
| 15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | 35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| INCLOSURE MATERIAL | PLASTIC |
| TERMINAL TYPE AND QUANTITY | 3 PRINTED CIRCUIT |
| OVERALL LENGTH | 1.8 MILLIMETERS MINIMUM AND |
| 2.2 MILLIMETERS MAXIMUM |
| MOUNTING METHOD | TERMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | SOT-23 |
| TERMINAL LENGTH | 0.9 MILLIMETERS NOMINAL |
| OVERALL HEIGHT | 1.1 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 2.0 MILLIMETERS MINIMUM AND |
| 2.2 MILLIMETERS MAXIMUM |
| PRECIOUS MATERIAL | GOLD |