| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 NOMINAL COLLECTOR TO EMITTER SATURATION VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES NOMINAL COLLECTOR CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 1.5 WATTS NOMINAL TOTAL DEVICE DISSIPATION |
| INCLOSURE MATERIAL | GLASS |
| TERMINAL TYPE AND QUANTITY | 3 TAB, SOLDER LUG AND |
| 1 CASE |
| OVERALL LENGTH | 7.000 INCHES NOMINAL |
| MOUNTING METHOD | SLOT |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| TRANSFER RATIO | 40.0 MINIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND |
| 250.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| MOUNTING FACILITY QUANTITY | 4 |
| FUNCTION FOR WHICH DESIGNED | AMPLIFIER |
| SPECIAL FEATURES | HOUSED IN SOT-223 PACKAGE;PB FREE;MARKING BH;NPN SILICON EPITAXIAL TRANSISTOR;HIGH CURRENT 1A;SURFACE MOUNT |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | BIPOLAR EPITAXIAL TRANSISTOR |