| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND |
| 15.0 NOMINAL COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND |
| 2.5 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | 100.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN |
| POWER RATING PER CHARACTERISTIC | 700.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION |
| INCLOSURE MATERIAL | PLASTIC |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| MOUNTING METHOD | TERMINAL |
| FUNCTION FOR WHICH DESIGNED | AMPLIFIER |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | NPN PLANAR RF TRANSISTOR |