| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 1.2 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 4 PIN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND |
| 0.230 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.670 INCHES MINIMUM AND |
| 0.710 INCHES MAXIMUM |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| SPECIAL FEATURES | OPERATING TEMPERATURE:-65 TO 200 DEGREES CELSIUS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | (INAVY)SEMICONDUCTOR DEVIC;(DRAWING)SEMICONDUCTOR DEVICE, TRANSISTOR, AMPLIFIER, PNP, SILICON(A3263509) |