SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC |
CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 1.2 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 4 PIN |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
OVERALL DIAMETER | 0.209 INCHES MINIMUM AND |
| 0.230 INCHES MAXIMUM |
OVERALL HEIGHT | 0.670 INCHES MINIMUM AND |
| 0.710 INCHES MAXIMUM |
FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
SPECIAL FEATURES | OPERATING TEMPERATURE:-65 TO 200 DEGREES CELSIUS |
PART NAME ASSIGNED BY CONTROLLING AGENCY | (INAVY)SEMICONDUCTOR DEVIC;(DRAWING)SEMICONDUCTOR DEVICE, TRANSISTOR, AMPLIFIER, PNP, SILICON(A3263509) |