| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND |
| 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND |
| 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | 150.00 AMPERES MAXIMUM DRAIN CURRENT AND |
| 150.00 AMPERES MAXIMUM SOURCE CURRENT |
| POWER RATING PER CHARACTERISTIC | 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 3 SCREW |
| OVERALL LENGTH | 3.620 INCHES NOMINAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| MOUNTING FACILITY QUANTITY | 2 |
| OVERALL HEIGHT | 1.125 INCHES NOMINAL |
| OVERALL WIDTH | 1.125 INCHES NOMINAL |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | POWER TRANSISTOR MODULE, ISOLATED BASE -- FIELD EFFECT, MOS, N-CHANNEL, SILICON |