| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 NOMINAL DRAIN TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | 30.00 AMPERES NOMINAL DRAIN CURRENT |
| POWER RATING PER CHARACTERISTIC | 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| INCLOSURE MATERIAL | PLASTIC OR |
| CERAMIC |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 1.130 INCHES NOMINAL |
| MOUNTING METHOD | TERMINAL |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| OVERALL HEIGHT | 0.160 INCHES MINIMUM AND |
| 0.190 INCHES MAXIMUM |
| OVERALL WIDTH | 0.039 INCHES NOMINAL |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |
| SPECIAL FEATURES | TMOS V, POWER FIELD EFFECT TRANSISTOR; P-CHANNEL ENHANCEMENT-MODE SILICON GATE |