| OVERALL LENGTH | 29.3 MILLIMETERS MAXIMUM |
| MOUNTING METHOD | TERMINAL AND |
| UNTHREADED HOLE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MOUNTING FACILITY QUANTITY | 3 |
| OVERALL DIAMETER | 4.5 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 4.5 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 10.3 MILLIMETERS MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.9 MILLIMETERS MAXIMUM |
| SPECIAL FEATURES | N-CHANNEL ENHANCEMENT MODE STANDARD LEVEL FIELD-EFFECT POWER TRANSISTOR IN A PLASTIC ENVELOPE USING TRENCH TECHNOLOGY. THE DEVICE FEATURES VERY LOWO N-STATE RESISTANCE AND HAS INTEGRAL ZENER DIODES GIVING ESD PROTECTION UP TO 2KV. IT IS INTENDED FOR USE IN AUTOMOTIVE AND GENERAL PURPOSE SWITCHING APPLICATIONS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 55.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND |
| 55.0 MAXIMUM DRAIN TO GATE VOLTAGE AND |
| 16.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | 31.00 AMPERES MAXIMUM DRAIN CURRENT AND |
| 180.00 AMPERES MAXIMUM PEAK PULSE CURRENT |
| POWER RATING PER CHARACTERISTIC | 103.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| INCLOSURE MATERIAL | PLASTIC AND |
| METAL |
| TERMINAL TYPE AND QUANTITY | 3 PIN AND |
| 1 UNTHREADED HOLE |