| COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| INTERNAL CONFIGURATION | FIELD EFFECT ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND |
| 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND |
| 25.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE ALL TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 625.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
| INCLOSURE MATERIAL | PLASTIC ALL TRANSISTOR |
| MOUNTING METHOD | TERMINAL ALL TRANSISTOR |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM ALL TRANSISTOR |
| TERMINAL TYPE AND QUANTITY | 12 UNINSULATED WIRE LEAD ALL TRANSISTOR |
| OVERALL LENGTH | 0.185 INCHES MAXIMUM ALL TRANSISTOR |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| FIELD FORCE EFFECT TYPE | ELECTROSTATIC CHARGE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND |
| ELECTROSTATIC SENSITIVE |