| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND |
| 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND |
| -10.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT |
| POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| MOUNTING METHOD | TERMINAL |
| INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72 |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FIELD FORCE EFFECT TYPE | ELECTROSTATIC CHARGE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND |
| ELECTROSTATIC SENSITIVE |