| CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES MAXIMUM DRAIN CURRENT |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| III SEMICONDUCTOR MATERIAL | SILICON |
| INCLOSURE MATERIAL | METAL |
| POWER RATING PER CHARACTERISTIC | 800.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| PROPRIETARY CHARACTERISTICS | PACS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| MOUNTING METHOD | TERMINAL |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 38.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 38.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |