SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 0.8 MAXIMUM GATE TRIGGER VOLTAGE, DC AND |
| 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND |
| 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
CURRENT RATING PER CHARACTERISTIC | 200.00 MICROAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND |
| 8.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC AND |
| 4.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL |
POWER RATING PER CHARACTERISTIC | 100.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER DISSIPATION AND |
| 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |
INCLOSURE MATERIAL | PLASTIC |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 0.381 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 3 PIN |
OVERALL LENGTH | 0.705 INCHES NOMINAL |
OVERALL HEIGHT | 0.546 INCHES NOMINAL |
OVERALL WIDTH | 0.400 INCHES NOMINAL |
FUNCTION FOR WHICH DESIGNED | RECTIFIER |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |