SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND |
| 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
CURRENT RATING PER CHARACTERISTIC | 25.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND |
| 300.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT |
POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER DISSIPATION AND |
| 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 129.0 DEG CELSIUS CASE |
INCLOSURE MATERIAL | METAL AND |
| PLASTIC |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 14.73 MILLIMETERS MAXIMUM |
TERMINAL TYPE AND QUANTITY | 3 PIN |
OVERALL LENGTH | 16.51 MILLIMETERS MAXIMUM |
OVERALL HEIGHT | 4.82 MILLIMETERS MAXIMUM |
OVERALL WIDTH | 10.66 MILLIMETERS MAXIMUM |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |