SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND |
| 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND |
| 1.00 AMPERES MAXIMUM BASE CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 36.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
INCLOSURE MATERIAL | PLASTIC |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.450 INCHES MAXIMUM |
MOUNTING METHOD | TERMINAL AND |
| UNTHREADED HOLE |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
TRANSFER RATIO | 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 165.0 DEG CELSIUS JUNCTION |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-126 |
MOUNTING FACILITY QUANTITY | 1 |
TERMINAL LENGTH | 0.655 INCHES MAXIMUM |
OVERALL HEIGHT | 0.120 INCHES MAXIMUM |
OVERALL WIDTH | 0.330 INCHES MAXIMUM |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |