| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND |
| 3.5 MINIMUM PEAK-POINT VOLTAGE AND |
| 7.0 MAXIMUM PEAK-POINT VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | 10.00 NANOAMPERES MAXIMUM FORWARD GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE, INSULATED-GATE |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND |
| 0.210 INCHES MAXIMUM |
| MOUNTING METHOD | TERMINAL |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72 |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND |
| 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND |
| ELECTROSTATIC SENSITIVE |