| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND |
| 400.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | 12.00 AMPERES MAXIMUM DRAIN CURRENT |
| POWER RATING PER CHARACTERISTIC | 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND |
| 1 CASE |
| OVERALL LENGTH | 1.527 INCHES MAXIMUM |
| MOUNTING METHOD | UNTHREADED HOLE |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING FACILITY QUANTITY | 2 |
| OVERALL HEIGHT | 0.450 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |