III SEMICONDUCTOR MATERIAL | SILICON |
INCLOSURE MATERIAL | METAL |
PROPRIETARY CHARACTERISTICS | PACS |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
MOUNTING FACILITY QUANTITY | 2 |
MOUNTING METHOD | UNTHREADED HOLE |
OVERALL LENGTH | 0.315 INCHES MINIMUM AND 0.335 INCHES MAXIMUM |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM DRAIN TO GATE VOLTAGE |
TERMINAL TYPE AND QUANTITY | 2 UNTHREADED HOLE AND 1 CASE |