COMPONENT FUNCTION RELATIONSHIP | MATCHED |
COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 40.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 90.0 CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
POWER RATING PER CHARACTERISTIC | 30.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
PRECIOUS MATERIAL | GOLD |
PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACES OPTION GOLD |
SEMICONDUCTOR MATERIAL | GERMANIUM ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL LENGTH | 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -15.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE |