|
|
National Stock Number: 5961-01-213-4396
Federal Supply Class: 5961
National Item Identification Number: 012134396
Description: SEMICONDUCTOR DEVICES,UNITIZED
Detail: Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
|
Manufacturer Information:
146126-2 | 00752 | L3HARRIS TECHNOLOGIES, INC. | JANTXV2N2060 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | MIL-PRF-19500/270 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M |
|
Techincal Specification:
COMPONENT NAME AND QUANTITY | 2 TRANSISTOR | CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR | INCLOSURE MATERIAL | METAL | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-99 | OVERALL DIAMETER | 0.370 INCHES MAXIMUM | OVERALL LENGTH | 0.260 INCHES MAXIMUM | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | MOUNTING METHOD | TERMINAL | POWER RATING PER CHARACTERISTIC | 2.12 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR | SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEMS; ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/270 GOVERNMENT SPECIFICATION | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL | TERMINAL LENGTH | 0.500 INCHES MINIMUM | TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR |
|
|