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National Stock Number:
5961-01-212-8023
Federal Supply Class:
5961
National Item Identification Number:
012128023
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
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Manufacturer Information:
| 20-00942-012 | 00724 | RAYTHEON COMPANY | | 44054 | 58135 | ACRIAN INC | | CD4772 | 50155 | VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV | | MS1801 | 08JA0 | MICROSEMI CORP. - MONTGOMERYVILLE | | PH8758 | 50998 | M/A-COM TECHNOLOGY SOLUTIONS INC. | | RF44054 | 59677 | RF GAIN LTD | | SD1463-12H | 57962 | STMICROELECTRONICS INC | | SRF7021H | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 44054 | 0NY61 | RF PRODUCTS INC |
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Techincal Specification:
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR | | CURRENT RATING PER CHARACTERISTIC | 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INCLOSURE MATERIAL | CERAMIC AND METAL | | OVERALL HEIGHT | 0.280 INCHES MAXIMUM | | OVERALL LENGTH | 0.900 INCHES NOMINAL | | OVERALL WIDTH | 0.735 INCHES MAXIMUM | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION | | MOUNTING METHOD | PRESS FIT | | POWER RATING PER CHARACTERISTIC | 270.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR | | PRECIOUS MATERIAL AND LOCATION | LEADS GOLD | | PRECIOUS MATERIAL | GOLD | | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR | | SPECIAL FEATURES | CERAMIC CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES; TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 32.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR | | TERMINAL TYPE AND QUANTITY | 8 RIBBON | | TEST DATA DOCUMENT | 00724-20-00942 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). | | TRANSFER RATIO | 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR |
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