| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -25.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM GATE CURRENT AND |
| 400.00 MILLIAMPERES MAXIMUM DRAIN CURRENT |
| POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.150 INCHES MAXIMUM |
| MOUNTING METHOD | TERMINAL |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |