| CAPACITANCE RATING IN PICOFARADS | 0.23 MINIMUM AND 0.27 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| INCLOSURE MATERIAL | CERAMIC AND METAL ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL DIAMETER | 0.620 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL LENGTH | 1.000 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| MOUNTING FACILITY QUANTITY | 1 ALL SEMICONDUCTOR DEVICE DIODE |
| MOUNTING METHOD | THREADED STUD ALL SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 1 THREADED STUD ALL SEMICONDUCTOR DEVICE DIODE |
| TEST DATA DOCUMENT | 53711-6116243 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1.0 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |