| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 120.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND |
| 120.0 MAXIMUM BREAKOVER VOLTAGE, INSTANTANEOUS |
| CURRENT RATING PER CHARACTERISTIC | 30.00 AMPERES NOMINAL COLLECTOR CURRENT, DC AND |
| 1.00 AMPERES NOMINAL BASE CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 200.0 WATTS MINIMUM PEAK TURN-ON POWER DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 1.550 INCHES MAXIMUM |
| MOUNTING METHOD | TERMINAL |
| INTERNAL CONFIGURATION | JUNCTION CONTACT-DARLINGTON CONNECTED |
| TRANSFER RATIO | 4.0 MINIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-COLLECTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| TERMINAL LENGTH | 0.440 INCHES MINIMUM AND |
| 0.480 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.690 INCHES MINIMUM AND |
| 0.780 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |