| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND |
| 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND |
| 120.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 2.2 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 0.643 INCHES MAXIMUM |
| MOUNTING METHOD | UNTHREADED HOLE |
| INTERNAL CONFIGURATION | JUNCTION CONTACT-DARLINGTON CONNECTED |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| MOUNTING FACILITY QUANTITY | 1 |
| OVERALL HEIGHT | 0.085 INCHES MAXIMUM |
| OVERALL WIDTH | 0.505 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |