|
|
|
National Stock Number:
5961-01-198-9994
Federal Supply Class:
5961
National Item Identification Number:
011989994
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
|
Manufacturer Information:
| 2N5909 | 17856 | SILICONIX INCORPORATED | | SC5961-0031-1 | 12115 | DRS ICAS, LLC |
|
Techincal Specification:
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR | | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR | | INCLOSURE MATERIAL | METAL | | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-78 | | OVERALL DIAMETER | 0.370 INCHES NOMINAL | | OVERALL LENGTH | 0.225 INCHES NOMINAL | | MOUNTING METHOD | TERMINAL | | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR | | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR | | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL | | TERMINAL LENGTH | 0.500 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 7 UNINSULATED WIRE LEAD | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -400.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -40.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR |
|
|