SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 250.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND |
| 225.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND |
| 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND |
| 2.00 AMPERES MAXIMUM BASE CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 2 UNTHREADED HOLE AND |
| 1 CASE |
OVERALL LENGTH | 1.573 INCHES MAXIMUM |
MOUNTING METHOD | UNTHREADED HOLE |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
MOUNTING FACILITY QUANTITY | 2 |
OVERALL HEIGHT | 0.450 INCHES MAXIMUM |
OVERALL WIDTH | 1.050 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |