SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND |
| 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND |
| 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
POWER RATING PER CHARACTERISTIC | 2.7 WATTS MAXIMUM TOTAL POWER DISSIPATION |
INCLOSURE MATERIAL | CERAMIC |
TERMINAL TYPE AND QUANTITY | 4 RIBBON |
OVERALL LENGTH | 0.740 INCHES MINIMUM |
MOUNTING METHOD | PRESS FIT |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
TRANSFER RATIO | 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
OVERALL HEIGHT | 0.187 INCHES MAXIMUM |
OVERALL WIDTH | 0.810 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |