SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND |
| 10.0 MAXIMUM PEAK GATE VOLTAGE |
CURRENT RATING PER CHARACTERISTIC | 8.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND |
| 100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE |
POWER RATING PER CHARACTERISTIC | 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND |
| 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | PLASTIC |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
MOUNTING METHOD | UNTHREADED HOLE |
MOUNTING FACILITY QUANTITY | 1 |
TERMINAL LENGTH | 0.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.210 INCHES MAXIMUM |
TERMINAL TYPE AND QUANTITY | 3 PIN |
OVERALL LENGTH | 0.650 INCHES MAXIMUM |
OVERALL HEIGHT | 0.190 INCHES MAXIMUM |
OVERALL WIDTH | 0.420 INCHES MAXIMUM |
SPECIFICATION/STANDARD DATA | 80131-RELEASE6376 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |