SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 375.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND |
| 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
CURRENT RATING PER CHARACTERISTIC | 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, RMS VALUE OF ALTERNATION COMPONENT AND |
| 2.00 AMPERES MAXIMUM BASE CURRENT, RMS VALUE OF ALTERNATION COMPONENT |
POWER RATING PER CHARACTERISTIC | 100.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 2 UNTHREADED HOLE AND |
| 1 CASE |
OVERALL LENGTH | 1.421 INCHES MAXIMUM |
MOUNTING METHOD | UNTHREADED HOLE |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
TRANSFER RATIO | 80.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0-3 |
MOUNTING FACILITY QUANTITY | 2 |
OVERALL HEIGHT | 0.450 INCHES MAXIMUM |
OVERALL WIDTH | 1.050 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
TEST DATA DOCUMENT | 02735-66969 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |