TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/474 GOVERNMENT SPECIFICATION |
PRECIOUS MATERIAL | GOLD |
PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACE OPTION GOLD |
SPEC/STD CONTROLLING DATA | |
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | JANTX1N5768 |
MANUFACTURERS CODE | 81349 |
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | MIL-PRF-19500/474 |
COMPONENT NAME AND QUANTITY | 8 SEMICONDUCTOR DEVICE DIODE |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 300.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND |
| 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE |
POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
INCLOSURE MATERIAL | CERAMIC |
MOUNTING METHOD | TERMINAL |
TERMINAL TYPE AND QUANTITY | 10 PIN |
OVERALL LENGTH | 0.290 INCHES MAXIMUM |
OVERALL HEIGHT | 0.090 INCHES MAXIMUM |
OVERALL WIDTH | 1.000 INCHES MAXIMUM |