SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND |
| 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, WITH SPECIFIED VOLTAGE BETWEEN BASE AND EMITTER AND |
| 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC |
CURRENT RATING PER CHARACTERISTIC | 2.50 AMPERES MAXIMUM BASE CURRENT, DC AND |
| 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 175.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 1 CASE AND |
| 2 PIN |
OVERALL LENGTH | 0.250 INCHES MINIMUM AND |
| 0.300 INCHES MAXIMUM |
MOUNTING METHOD | UNTHREADED HOLE |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING FACILITY QUANTITY | 2 |
OVERALL DIAMETER | 0.830 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |