SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -36.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| -18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND |
| -4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | 5.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 4 RIBBON |
OVERALL LENGTH | 0.280 INCHES MAXIMUM |
MOUNTING METHOD | THREADED STUD |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
MOUNTING FACILITY QUANTITY | 1 |
THREAD SERIES DESIGNATOR | UNC |
NOMINAL THREAD SIZE | 0.164 INCHES |
OVERALL DIAMETER | 0.350 INCHES MINIMUM AND |
| 0.380 INCHES MAXIMUM |
FUNCTION FOR WHICH DESIGNED | AMPLIFIER |
FEATURES PROVIDED | MOUNTING HARDWARE |
TEST DATA DOCUMENT | 08771-19A134060 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
SPECIAL FEATURES | POWER OUTPUT 2.8 WATTS; JUNCTION PATTERN ARRANGEMENT: NPN |