ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
COMPONENT NAME AND QUANTITY | 6 SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 25.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
INCLOSURE MATERIAL | METAL |
OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
OVERALL LENGTH | 0.187 INCHES MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS AMBIENT AIR |
MOUNTING METHOD | TERMINAL |
SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM REVERSE VOLTAGE, PEAK 1ST SEMICONDUCTOR DEVICE DIODE |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM REVERSE VOLTAGE, PEAK 2ND SEMICONDUCTOR DEVICE DIODE |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM REVERSE VOLTAGE, PEAK 3RD SEMICONDUCTOR DEVICE DIODE |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM REVERSE VOLTAGE, PEAK 4TH SEMICONDUCTOR DEVICE DIODE |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM REVERSE VOLTAGE, PEAK 5TH SEMICONDUCTOR DEVICE DIODE |
TERMINAL CIRCLE DIAMETER | 0.245 INCHES MAXIMUM |
TERMINAL LENGTH | 0.500 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 12 UNINSULATED WIRE LEAD |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 0.5 MAXIMUM REVERSE VOLTAGE, PEAK 6TH SEMICONDUCTOR DEVICE DIODE |