COMPONENT NAME AND QUANTITY | 8 SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 350.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE AND 200.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
INCLOSURE MATERIAL | PLASTIC |
POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
PROPRIETARY CHARACTERISTICS | PACS |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
MOUNTING METHOD | PRESS FIT |
OVERALL HEIGHT | 0.200 INCHES MAXIMUM |
OVERALL LENGTH | 0.870 INCHES MAXIMUM |
OVERALL WIDTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 65.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL TYPE AND QUANTITY | 16 RIBBON |