5961-01-011-4957, TRANSISTOR

5961-01-011-4958 SEMICONDUCTOR DEVICE,DIODE

National Stock Number:
5961-01-011-4957

Federal Supply Class:
5961

National Item Identification Number:
010114957

Description:
TRANSISTOR

Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Manufacturer Information:

0N205436	98230	NATIONAL SECURITY AGENCY
1855-0392	28480	HEWLETT-PACKARD COMPANY
20-00707-001	00724	RAYTHEON COMPANY
2682578	53711	NAVAL SEA SYSTEMS COMMAND
2N4416	04713	FREESCALE SEMICONDUCTOR, INC.
2N4416	17856	SILICONIX INCORPORATED
2N4416	21845	SOLITRON DEVICES, INC.
2N4416A	01295	TEXAS INSTRUMENTS INCORPORATED
2N4416A	17856	SILICONIX INCORPORATED
2N4416A-2	17856	SILICONIX INCORPORATED
352-0756-012	13499	ROCKWELL COLLINS, INC.
352-8011-240	13499	ROCKWELL COLLINS, INC.
352-8011-240	95105	ROCKWELL COLLINS, INC.
419R559H01	97942	NORTHROP GRUMMAN SYSTEMS CORPORATION
4810-0000-001	51190	VIAVI SOLUTIONSLLC
928209-2B	82577	RAYTHEON COMPANY
A500-58	12775	C-COR ELECTRONICS INC
JAN2N4416	81349	MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
JANTX2N4416	81349	MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
JANTX2N4416A	81349	MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
MIL-PRF-19500/428	81349	MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
MIL-S-19500/428	81349	MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
SFE1300H3	04713	FREESCALE SEMICONDUCTOR, INC.

Techincal Specification:

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE	GATE
CURRENT RATING PER CHARACTERISTIC	10.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
INCLOSURE MATERIAL	METAL
INTERNAL CONFIGURATION	FIELD EFFECT
OVERALL DIAMETER	0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH	0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION
MOUNTING METHOD	TERMINAL
POWER RATING PER CHARACTERISTIC	300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL	SILICON
SPECIFICATION/STANDARD DATA	81349-MIL-S-19500/428 GOVERNMENT SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE TO SOURCE VOLTAGE
TERMINAL CIRCLE DIAMETER	0.100 INCHES NOMINAL
TERMINAL LENGTH	0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY	4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT	81349-MIL-C-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.).

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