| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 150.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 7.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND |
| 150.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | 40.00 AMPERES NOMINAL COLLECTOR CURRENT, DC AND |
| 10.00 AMPERES NOMINAL BASE CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 80.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 2 PIN |
| OVERALL LENGTH | 0.061 INCHES MAXIMUM |
| MOUNTING METHOD | UNTHREADED HOLE |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING FACILITY QUANTITY | 2 |
| OVERALL HEIGHT | 0.061 INCHES MAXIMUM |
| OVERALL WIDTH | 0.800 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |