| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 55.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND |
| 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND |
| 7.00 AMPERES MAXIMUM BASE CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 78.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 39.5 MILLIMETERS MAXIMUM |
| MOUNTING METHOD | TERMINAL |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| OVERALL HEIGHT | 9.5 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 26.6 MILLIMETERS MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |