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National Stock Number:
5961-00-995-7824
Federal Supply Class:
5961
National Item Identification Number:
009957824
Description:
TRANSISTOR
Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
| 014-354 | 92739 | AMPEX SYSTEMS CORP | | 1854-0443 | 1LQK8 | KEYSIGHT TECHNOLOGIES, INC. | | 1854-0443 | 28480 | HEWLETT-PACKARD COMPANY | | 1854-0443 | 7ZXR5 | KEYSIGHT TECHNOLOGIES INC | | 2520634 | 10001 | NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER | | 2L5512-209-007254 | D0327 | SELEX ES GMBH | | 2L5512-209-007254 | D1901 | HENSOLDT SENSORS GMBH | | 2N709 | 03877 | GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP | | 2N709 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 2N709 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | | 2N709 | 30043 | SOLID STATE DEVICES, INC | | 2N709 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | 2N709 | 94151 | GENERAL DYNAMICS GOVERNMENT SYSTEMS CORPORATION | | 40-001011-01 | 30890 | INTERLINK COMMUNICATIONS INC | | 405856-1 | 3B150 | RAYTHEON COMPANY | | 405856-1 | 49956 | RAYTHEON COMPANY | | 5961009957824 | SCY13 | E.C.A ETABLISSEMENT CENTRALD'APPROVISIONNEMENT DES FORCES ARMEE | | 5961PL1387433 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH | | 5971009957824 | SCY13 | E.C.A ETABLISSEMENT CENTRALD'APPROVISIONNEMENT DES FORCES ARMEE | | RELEASE3436 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | SS955 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
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Techincal Specification:
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INCLOSURE MATERIAL | METAL | | INTERNAL CONFIGURATION | JUNCTION CONTACT | | OVERALL DIAMETER | 0.220 INCHES NOMINAL | | OVERALL LENGTH | 0.188 INCHES NOMINAL | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | | MOUNTING METHOD | TERMINAL | | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN | | SPECIFICATION/STANDARD DATA | 80131-RELEASE3436 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN | | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL | | TERMINAL LENGTH | 0.500 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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